Silicon Dioxide-Encapsulated High-Voltage AlGaN/GaN HFETs for Power-Switching Applications
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چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2007
ISSN: 0741-3106
DOI: 10.1109/led.2007.903910